Abstract:Electronic-grade dichlorosilane (DCS) is mainly used for strained silicon epitaxial growth and thin film deposition production process of silicon oxide, silicon nitride and metal silicides in advanced integrated circuit chip processing. The fast deposition speed, even deposition film and low temperature associated with the usage of DCS has resulted in its widespread use in IC manufacturing, but its import dependence remains an issue. This paper introduced the principles and applications of DCS preparation methods such as distillation purification, adsorption complexation and disproportionation reactions. It compared the above three methods, summarized future research directions, and provided an outlook on the application of advanced silicon-based precursors using electronic-grade DCS as raw material.